Preparation of Cubic Boron Nitride Films by RF Sputtering
Masahiro Mieno and Toyonobu Yoshida
Department of Metallurgy and Materials Science, Faculty of Engineering, University of Tokyo
(Received April 27, 1990; accepted for publication June 13, 1990)
Cubic boron nitride (c-BN) films have been prepared by sputtering of a hexagonal BN sintered target under a negative self-bias voltage applied to Si substrates and a sputtering gas composition of Ar/N2. A c-BN phase was found to be contained only in the films prepared in pure Ar discharge with a negative self-bias above a threshold value. Moreover, the ratio of c-BN to hexagonal boron nitride increased with increasing negative self-bias voltage. The films consisting mainly of the c-BN phase were easily peeled from Si substrates on exposure to air because of their strong compressive stress.
Diamond and Related Materials
Volume 8, Issues 2-5, March 1999, Pages 325-330 doi:10.1016/S0925-9635(98)00362-8 | How to Cite or Link Using DOI
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Microstructure of c-BNthinfilms deposited on diamond films
J. Pascallona, V. Stamboulia, , , S. Iliasa, D. Bouchiera, G. Nouetb, F. Silvac, A. Gicquelc
a Institut d’Electronique Fondamentale, Bât 220, Université Paris-Sud, 91405 Orsay cedex, France
b LERMAT, ISMRA, Bd du Maréchal Juin, 14050, Caen cedex, France
c LIMHP, Université de Villetaneuse, Av. J.B. Clément, 93430 Villetaneuse, France
Received 12 September 1998; Accepted 27 October 1998. Available online 22 April 1999.
Abstract
Diamond films were used as substrates for cubic boron nitride (c-BN) thinfilm deposition. The c-BNfilms were deposited by ion beam assisted deposition (IBAD) using a mixture of nitrogen and argon ions on diamond films. The diamond films exhibiting different values of surface roughness ranging from 16 to 200 nm (in Rrms) were deposited on Si substrates by plasma enhanced chemical vapor deposition. The microstructure of these c-BNfilms has been studied using in situ reflexion electron energy loss spectroscopy analyses at different primary energy values, Fourier transform infrared spectroscopy and high resolution transmission microscopy. The fraction of cubic phase in the c-BNfilms was depending on the roughness of the diamond surface. It was optimized in the case of the smooth surface presenting no particular geometrical effect for the incoming energetic nitrogen and argon ions during the deposition. The films showed a nanocrystalline cubic structure with columnar grains while the near surface region was sp2 bonded. The films exhibit the commonly observed layered structure of c-BNfilms, that is, a well textured c-BN volume lying on a h-BN basal layer with the (00.2) planes perpendicular to the substrate. The formation mechanism of c-BNfilms by IBAD, still involving a h-BN basal sublayer, does not depend on the substrate nature.
Keywords: c-BNfilms; Diamond substrate; Ion beam assisted deposition (IBAD); Microstructure
Nature Materials 2, 312 - 315 (2003)
Published online: 30 March 2003 | doi:10.1038/nmat870
Subject Categories: Structural materials | Surface and thin films | Design synthesis and processing
Epitaxy of cubic boron nitride on (001)-oriented diamond
X. W. Zhang1, H.-G. Boyen1, N. Deyneka1, P. Ziemann1, F. Banhart2 & M. Schreck3
Abstract
Cubic boron nitride (c-BN), although offering a number of highly attractive properties comparable to diamond, like hardness, chemical inertness and a large electronic bandgap, up to now has not found the attention it deserves. This mostly has to do with preparational problems, with easy chemical routes not available and, instead, the necessity to apply ion-bombardment-assisted methods. Hence, most of the c-BN samples prepared as thin films have been nanocrystalline, making the prospect of using this material for high-temperature electronic applications an illusion. Although heteroepitaxial nucleation of c-BN on diamond substrates has been demonstrated using the high-pressure–high-temperature technique1, 2, none of the low-pressure methods ever succeeded in the epitaxial growth of c-BN on any substrate. Here, we demonstrate that heteroepitaxial c-BN films can be prepared at 900 °C on highly (001)-oriented diamond films, formed by chemical vapour deposition, using ion-beam-assisted deposition as a low-pressure technique. The orientation relationship was found to be c-BN(001)[100]||diamond(001)[100]. High-resolution transmission electron microscopy additionally proved that epitaxy can be achieved without an intermediate hexagonal BN layer that is commonly observed3 on various substrates.
Jpn. J. Appl. Phys. 39 (2000) pp. L442-L444 |Next Article| |Table of Contents|
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Express Letter
High-Rate Deposition of High-Quality, Thick Cubic Boron Nitride Films by Bias-Assisted DC Jet Plasma Chemical Vapor Deposition
Seiichiro Matsumoto and Wenjun Zhang
National Institute for Research in Inorganic Materials, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
(Received April 3, 2000; accepted for publication April 19, 2000)
Cubic boron nitride thin films were deposited on (100) silicon substrates by DC jet plasma chemical vapor deposition in an Ar–N2–BF3–H2 gas system. Negative DC bias was applied on the substrate during deposition. Scanning electron microscopy, x-ray diffraction, infrared and Raman spectroscopy were carried out to characterize the samples. It was found that boron nitride films with cubic phase over 90% were synthesized under optimized conditions. A high deposition rate of about 0.3 µm/min and a film thickness over 3 µm were firstly achieved. Furthermore, the Raman measurements show clear TO and LO characteristic peaks of c-BN with a full width at half maximum of 28.8 and 19.7 cm-1, revealing a high quality of the deposited films.
Science 9 October 1987:
Vol. 238 no. 4824 pp. 181-183
DOI: 10.1126/science.238.4824.181
High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure
OSAMU MISHIMA, JUNZO TANAKA, SHINOBU YAMAOKA and OSAMU FUKUNAGA
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Author Affiliations
National Institute for Research in Inorganic Materials, 11 Namiki, Sakura-mura, Niihari-gun, Ibaraki 305, Japan.
Abstract
A p-n junction diode of cubic boron nitride was made by growing an n-type crystal epitaxially on a p-type seed crystal at a pressure of 55 kilobars and a temperature of about 1700°C. A temperature-difference solvent method was used for the crystal growth, and beryllium and silicon were doped as acceptors and donors, respectively. Formation of the p-n junction was clearly confirmed at 1 bar by rectification characteristics and by existence of a space charge layer of the junction as observed by electron beam induced current measurement. This diode operated at 530°C.
wBN, cBNのデバイ温度
Tetsuya Tohei, Akihide Kuwabara, Fumiyasu Oba, and Isao Tanaka, PHYSICAL REVIEW B 73, 064304 (2006).
"Debye temperature and stiffness of carbon and boron nitride polymorphs from first principles calculations"
wBNの衝撃圧縮による作製
V.F. Britun, A.V. Kurdyumov, N.I. Borimchuk, V.V. Yarosh, A.I. Danilenko, Diamond & Related Mat. 16, 267 (2007).
"Formation of diamond-like BN phases under shock compression of graphite-like BN with different degree of structural ordering"
