Science 9 October 1987:
Vol. 238 no. 4824 pp. 181-183
DOI: 10.1126/science.238.4824.181
High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure
OSAMU MISHIMA, JUNZO TANAKA, SHINOBU YAMAOKA and OSAMU FUKUNAGA
+
Author Affiliations
National Institute for Research in Inorganic Materials, 11 Namiki, Sakura-mura, Niihari-gun, Ibaraki 305, Japan.
Abstract
A p-n junction diode of cubic boron nitride was made by growing an n-type crystal epitaxially on a p-type seed crystal at a pressure of 55 kilobars and a temperature of about 1700°C. A temperature-difference solvent method was used for the crystal growth, and beryllium and silicon were doped as acceptors and donors, respectively. Formation of the p-n junction was clearly confirmed at 1 bar by rectification characteristics and by existence of a space charge layer of the junction as observed by electron beam induced current measurement. This diode operated at 530°C.
