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This integration of a transistor onto the glass matrix was based on a way devised by Lilienfeld in 1933 ( amazing ! ).
In principle, it’s a field-effect transistor similar to the well-known MOS ( Metal-Oxide-Silicon ) FET.
But, instead of the conventional way to make the transistor from bulk material, here it’s made by coating a glass cell wall with semiconductor, conductor layers and etching.
